First 3D SRAM Debut
PORTLAND, OR, June 08, 2021 /24-7PressRelease/ — BeSang Inc., a pioneer in monolithic 3D IC technologies in Portland, Oregon, introduces “3D Super-SRAM,” a high-density and low-cost SRAM technology which integrates well-known 6T-SRAM on top of logic circuitry. Unlike planar 6T-SRAM, “3D Super-SRAM” drastically reduces cell size and stacks these cells on top of other logic circuitry to achieve a small die size, which results in more die per wafer. Subsequently, large amounts of SRAM could be implemented as L2 or L3 cache memories at a much affordable cost compared to planar SRAM.
“BeSang’s proprietary monolithic 3D IC has been evolving and, finally, it is getting closer to Logic-on-Logic monolithic 3D IC applications. Therefore, ‘3D Super-SRAM’ is a substantial development for the semiconductor industry which still heavily depends on Moore’s Law,” states Sang-Yun Lee, CEO of BeSang Inc. “There is no doubt that embedded applications of ‘3D Super-SRAM’ will significantly boost CPU/GPU/AP performance with a large amount of cache memory. It is also vertically expandable which would achieve ultra-high memory density at a low cost. Ultimately ‘3D Super-SRAM’ could replace stand-alone DRAM with this combination of low cost-per-bit, high-memory density, and fast access time. I am confident that it will eventually shift the embedded and main memory hierarchy in the future.”
“3D Super-SRAM” will be available for embedded cache memory applications through IP licensing from BeSang Inc. In addition, BeSang is preparing for various stand-alone SRAM products based on its “3D Super-SRAM” technology in order to replace stand-alone DRAM.
BeSang is the FIRST and ONLY company which successfully implemented monolithic 3D IC in the semiconductor industry. BeSang is a fabless semiconductor company developing high-density and ultra-low cost semiconductor memory products and technologies along with IP development. BeSang is headquartered in Hillsboro, Oregon, USA. Additional information is available at www.besang.com.
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